个人信息
姓 名:宋效先 籍 贯:安徽亳州
出生年月:1985/07/18
毕业院校:天津大学 学 历:博士
邮 箱:songxiaoxian@ujs.edu.cn
教育背景
20130901-20170701天津大学 博士 专业:物理电子学专业
方向:激光器技术及光电器件方向
参与科研项目:
1、国防863项目新概念课题、2015/7 – 2016/6、 300万元、已结题、主要参与人
2、国家青年科学基金项目、No.0903065043、红外光敏型石墨烯/量子点晶体管的超快响应的研究2017/1 -2019/12、24万元、未结题,主要参与人。
发表论文情况:
[1] X. Song; Y. Zhang; H. Zhang; Y. Yu; M. Cao; Y. Che; J. Wang; H. Dai; J. Yang; X. Ding; J. Yao, Graphene and PbS quantum dots hybrids vertical phototransistor. Nanotechnology 2017.
[2] X. Song; Y. Zhang; H. Zhang; Y. Yu; M. Cao; Y. Che; J. Wang; H. Dai; J. Yang; X. Ding; J. Yao, High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor. Nanotechnology 2016, 27, 405201.
[3] X. X. Song; Y. T. Zhang; H. T. Zhang; Y. Yu; M. X. Cao; Y. L. Che; J. L. Wang; J. B. Yang; X. Ding; J. Q. Yao, Improved photoelectronic performance of graphene, polymer and PbSe quantum dot infrared photodetectors. Mater Lett 2016, 178, 52-55.
[4] X. Song; Y. Zhang; H. Zhang; Y. Yu; M. Cao; Y. Che; J. Wang; H. Dai; J. Yang; X. Ding; J. Yao, Improved hybrid polymer/PbS quantum dot infrared phototransistors incorporating single-layer graphene, Optoelectronic Devices and Integration VI, 12-14 Oct. 2016, SPIE: USA, 2016; p 100190S (11 pp.).
[5] Y. Zhang; X. Song; R. Wang; M. Cao; H. Wang; Y. Che; X. Ding; J. Yao, Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions. Nanotechnology 2015, 26, 8.
[6] M. X. Cao; Y. T. Zhang; X. X. Song; Y. L. Che; H. T. Zhang; C. Yan; H. T. Dai; G. Liu; G. Z. Zhang; J. Q. Yao, Enhanced amplified spontaneous emission in a quantum dot-doped polymer-dispersed liquid crystal. Nanotechnology 2016, 27, 5.
[7] M. Cao; Y. Zhang; X. Song; Y. Che; H. Zhang; H. Dai; G. Zhang; J. Yao, Random lasing in a colloidal quantum dot-doped disordered polymer. Opt Express 2016, 24, 9325-9331.
[8] H. Zhang; Y. Zhang; X. Song; Y. Yu; M. Cao; Y. Che; J. Wang; J. Yang; H. Dai; G. Zhang; J. Yao, High performance PbSe colloidal quantum dot vertical field effect phototransistors. Nanotechnology 2016, 27, 425204.
[9] H. Zhang; Y. Zhang; X. Song; Y. Yu; M. Cao; Y. Che; Z. Zhang; H. Dai; J. Yang; G. Zhang; J. Yao, Highly Photosensitive Vertical Phototransistors Based on a Poly(3-hexylthiophene) and PbS Quantum Dot Layered Heterojunction. ACS Photonics 2017.
[10] H. Zhang; Y. Zhang; X. Song; Y. Yu; M. Cao; Y. Che; H. Dai; J. Yang; X. Ding; G. Zhang; J. Yao, Short Channel Quantum Dot Vertical and Lateral Phototransistors. Advanced Optical Materials 2016, 1-7.
[11] Y. Zhang; M. Cao; X. Song; J. Wang; Y. Che; H. Dai; X. Ding; G. Zhang; J. Yao, Multiheterojunction Phototransistors Based on Graphene–PbSe Quantum Dot Hybrids. J Phys Chem C 2015, 119, 21739-21743.
[12] Y. Yu; Y. Zhang; X. Song; H. Zhang; M. Cao; Y. Che; H. Dai; J. Yang; H. Zhang; J. Yao, PbS-Decorated WS2 Phototransistors with Fast Response. ACS Photonics 2017.
[13] J. Wang; Y. Zhang; X. Song; M. Cao; H. Wang; Y. Che; J. Yao, Amplified spontaneous emission in distributed feedback active microcavities fabricated by the sol–gel dip-coating method. J Mod Optic 2016, 1-6.
[14] H. Y. Wang; Y. T. Zhang; X. X. Song; L. F. Jin; H. T. Dai; S. Wu; J. Q. Yao In Design and implementation of colloidal quantum dot field-effect transistors, 3rd Asian Pacific Conference on Mechanical Components and Control Engineering, ICMCCE 2014, September 20, 2014 - September 21, 2014, Zhuhai, China, Trans Tech Publications Ltd: Zhuhai, China, 2014; pp 818-821.
[15] H. Zhang; Y. Zhang; X. Song; Y. Yu; M. Cao; Y. Che; J. Wang; H. Dai; G. Zhang; J. Yao In The ambipolar operation of lateral and vertical PbSe quantum dots field effect phototransistors, Applied Mechanics and Materials, 2016; pp 96860E-96860E-6.
[16] J. Wang; Y. Zhang; M. Cao; X. Song; Y. Che; H. Zhang; H. Zhang; J. Yao, Platinum-scatterer-based random lasers from dye-doped polymer-dispersed liquid crystals in capillary tubes. Appl Optics 2016, 55, 5702-5706.
[17] R. Wang; Y. T. Zhang; H. Y. Wang; X. X. Song; L. F. Jin; J. Q. Yao, Wide Spectral Response Field-Effect Phototransistor Based on Graphene-Quantum Dot Hybrid. IEEE Photonics J. 2015, 7.
[18] Y. Che; Y. Zhang; X. Cao; X. Song; M. Cao; H. Dai; J. Yang; G. Zhang; J. Yao, Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate. Appl Phys Lett 2016, 109, 013106.
[19] Y. Yu; Y. Zhang; Z. Zhang; H. Zhang; X. Song; M. Cao; Y. Che; H. Dai; J. Yang; J. Wang; H. Zhang; J. Yao, Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction. The Journal of Physical Chemistry Letters 2017, 445-451.
[20] Y. Che; Y. Zhang; X. Cao; X. Song; H. Zhang; M. Cao; H. Dai; J. Yang; G. Zhang; J. Yao, High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode. Appl Phys Lett 2016, 109, 263101.
[21] Y. Che; Y. Zhang; X. Cao; X. Song; M. Cao; H. Dai; J. Yang; G. Zhang; J. Yao, Low operating voltage ambipolar graphene oxide-floating-gate memory devices based on quantum dots. Journal of Materials Chemistry C 2016.
[22] H. Wang; Y. Zhang; L. Jin; X. Song; J. Yao, Acceleration aging study of amplified spontaneous emission broadband source. Zhongguo Jiguang/Chinese Journal of Lasers 2015, 42.
[23] L. Jin; Y. Zhang; H. Wang; M. Wang; X. Song; J. Yao, Accelerated aging of InGaAs PIN photoelectric detectors. Zhongguo Jiguang/Chinese Journal of Lasers 2014, 41.
[24] J. Wang; Y. Zhang; X. Song; M. Cao; H. Wang; Y. Che; J. Yao, An effective method to enhance working temperature range of lasers from dye-doped cholesteric liquid crystals. International Symposium on Advanced Optical Design and Manufacturing Technologies and International Symposium on Astronomical Telescope and Instrumentation, May 9, 2016 - May 11, 2016